? semiconductor components industries, llc, 2004 october, 2004 ? rev. 3 1 publication order number: MMBT2131t1/d MMBT2131t1 general purpose transistors pnp bipolar junction transistor (complementary npn device: mmbt2132t1/t3) note: voltage and current are negative for the pnp transistor. maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage v ceo 30 v collector?base voltage v cbo 40 v emitter?base voltage v ebo 5.0 v collector current i c 700 ma base current i b 350 ma total power dissipation @ t c = 25 c total power dissipation @ t c = 85 c thermal resistance ? junction?to?ambient (note 1) p d p d r ja 342 178 366 mw mw c/w total power dissipation @ t c = 25 c total power dissipation @ t c = 85 c thermal resistance ? junction?to?ambient (note 2) p d p d r ja 665 346 188 mw mw c/w operating and storage temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. minimum fr?4 or g?10 pcb, operating to steady state. 2. mounted onto a 2 square fr?4 board (1 sq. 2 oz cu 0.06 thick single sided), operating to steady state. http://onsemi.com device package shipping 2 ordering information MMBT2131t1 sc?74 3000/tape & reel sc?74 suffix case 318f style 2 marking diagram db = specific device code m = date code 1 2 4 0.7 amperes 30 volts ? v (br)ceo 342 mw collector pins 2, 5 base pin 6 emitter pin 3 3 5 6 db m 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
MMBT2131t1 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?base breakdown voltage (i c = 100 a) v (br)cbo 40 ? ? v collector ?emitter breakdown voltage (i c = 10 ma) v (br)ceo 30 ? ? v emitter?base breakdown voltage (i e = 100 a) v (br)ebo 5.0 ? ? v collector cutoff current (v cb = 25 v, i e = 0 a) (v cb = 25 v, i e = 0 a, t a = 125 c) i cbo ? ? ? ? 1.0 10 a emitter cutoff current (v eb = 5.0 v, i c = 0 a) i ebo ? ? 10 a on characteristics dc current gain (v ce = 3.0 v, i c = 100 ma) h fe 150 ? ? v collector ?emitter saturation voltage (i c = 500 ma, i b = 50 ma) v ce(sat) ? ? 0.25 v collector ?emitter saturation voltage (i c = 700 ma, i b = 70 ma) v ce(sat) ? ? 0.4 v base?emitter saturation voltage (i c = 700 ma, i b = 70 ma) v be(sat) ? ? 1.1 v collector?emitter saturation voltage (i c = 700 ma, v ce = 1.0 v) v be(on) ? ? 1.0 v figure 1. collector saturation region figure 2. collector saturation region figure 3. dc current gain figure 4. aono voltages 0.1 0.000001 i b , base current (a) 0.5 0.4 0.2 0.3 1.0 0.01 i c , collector current (a) 1000 100 i c , collector current (a) 0.001 1.0 0.1 0.01 0.01 v ce(sat) , collector-emitter voltage (v) h voltage (v) 0.1 0 0.0001 0.001 0.01 0.1 0.1 1.0 i c = 1.0 ma 0.7 a 0.00001 0.1 0.000001 i b , base current (a) 0.2 0.15 0.1 v ce(sat) , collector-emitter voltage (v) 0.05 0 0.0001 0.001 0.01 i c = 1.0 ma 0.5 a 0.00001 , dc current gain fe v ce = 3.0 v 10 ma 0.1 a 0.5 a 10 ma 0.1 a -40 c 150 c 25 c v be(sat) v ce(sat) i c /i b = 10
MMBT2131t1 http://onsemi.com 3 figure 5. aono voltages figure 6. collector?emitter saturation voltage 0.001 i c , collector current (a) 1.0 0.1 0.01 i c , collector current (a) 0.01 0.16 0.12 0.04 0 0.1 0.01 voltage (v) 0.1 1.0 1.0 0.08 v ce(sat) , voltage (v) v be(sat) v ce(sat) i c /i b = 100 i c /i b = 10 t = 85 c 25 c 0 c 0.5 0.2 0.1 0.05 0.02 0.01 figure 7. collector?emitter saturation voltage figure 8. v be(on) voltage figure 9. thermal response curve 1.0 0.1 i c , collector current (a) 0.6 0.4 0.2 0.3 0.01 0.0001 time (sec) 1.0 0.01 v ce(sat) , voltage (v) 0.1 0 0.001 1.0 0.0001 i c , collector current (a) 1.0 0.75 0.5 v be(on) , voltage (v) 0.25 0 0.001 0.01 v ce = 1.0 v transient thermal resistance (normalized) 0.5 0.1 0.1 0.1 1.0 10 100 i c /i b = 100 t = 85 c 25 c 0 c 150 c 25 c -40 c d curves apply for power pulse train shown read time at t 1 (see an569) z ja (t) = r(t) r ja t j(pk) - t a = p (pk) z ja (t) duty cycle, d = t 1 /t 2 t 1 t 2 p (pk)
MMBT2131t1 http://onsemi.com 4 package dimensions style 2: pin 1. no connection 2. collector 3. emitter 4. no connection 5. collector 6. base sc?74 case 318f?05 issue k 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max millimeters inches a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0649 1.25 1.65 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f?01, ?02, ?03 obsolete. new standard 318f?04. m j k on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMBT2131t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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